Coexisting Holes and Electrons in High-Tc Materials: implications from normal state transport

Coexisting Holes and Electrons in High-TC Materials: implications from normal state transport, D. R. Harshman J. D. Dow and A. T. Fiory [arXiv]
Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7–δ, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7–δ and Bi2Sr2CaCu2O8+δ. The electron band exhibits extremely strong scattering; the extrapolated DC residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole-electron analysis of Hall angle data suggest that the electrons possess the greater effective mass.


Temperature dependences of composite measured resistivity ρ (points and solid curve) and fitted electron ρn and hole ρp components (points and dashed curves). Dotted lines are guides to the eye connecting an undetermined interval between the origin and the superconducting transition. (a) Crystal specimens; (b) film specimens.

D. R. Harshman, J. D. Dow and A. T. Fiory, Philos. Mag. 91, 818 (2011).

Bookmark the permalink.

Leave a Reply